Multiscale Modeling of Formation and Structure of Oxide Embedded Silicon and Germanium Nanocrystals
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Study of Stress Evolution of Germanium Nanocrystals embedded in Silicon Oxide Matrix
Germanium (Ge) nanocrystals had been synthesized by annealing co-sputtered SiO2-Ge in N2 and/or forming gas (90% N2 + 10% H2) at temperatures ranging from 700 to 1000°C from 15 to 60 min. It was concluded that the annealing ambient, temperature and time have a significant influence on the formation and evolution of the nanocrystals. We also showed that a careful selective etching of the anneale...
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The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer metal-insulatorsemiconductor device was studied. We found that the RTO and the capping oxide layers were not totally effective in confining the Ge nanocrystals in the middle layer when a pure Ge middle layer was used for ...
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Wet thermal oxidations of polycrystalline Si0.54Ge0.46 films at 600°C for 30 and 50 min were carried out. A stable mixed oxide was obtained for films that were oxidized for 50 min. For film oxidized for 30 min, however, a mixed oxide with Ge nanocrystallites embedded in the oxide matrix was obtained. A trilayer gate stack structure that consisted of tunnel oxide/oxidized polycrystalline Si0.54G...
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In this study, colloidal germanium nanocrystals were synthesized by a simple and novel method, and their optical properties were also studied. Polyvinyl alcohol (PVA) as a surface modifier was used to control the optical properties of colloidal Ge nanocrystals. Fourier transform infrared spectroscopy (FTIR) analysis was performed to identify the various functional groups present in the sample. ...
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تاریخ انتشار 2005